Advanced junction devices including VLSI bipolar transistors, Si-Ge and III-V HBTs, high-level injection, high-frequency devices.
Prerequisite: 471 or 572
Materials and Devices II - ECE *471
Semiconductor Physics - ECE 572
MSC11 6325
1 University of New Mexico
Albuquerque, NM 87131
(505) 277-8900
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